A systematic study of chemical vapor deposition growth of InN

In this paper, the chemical vapor deposition (CVD) growth of indium nitride (InN) was systematically investigated. With In and NH 3 as the starting materials, and Au as the catalyst, the effect of the CVD growth parameters, such as the growth temperature, gas flow rates, catalyst type and catalyst thickness, In amount, and the distance between the substrates and In source, were all studied. All these parameters were found to have an influence on the morphology of InN nanostructures. It is found that the highest growth temperature is 550 °C. Larger gas flow rates with higher NH 3 ratio favors the growth of InN nanorods. Au and Ag are the successful catalysts for InN nanorods. Thicker catalyst thickness results in InN nanorods with larger polyhedral ends. Both cubic and hexagonal InN are observed.