Phase separation in SiOx films annealed under enhanced hydrostatic pressure

The effect of enhanced hydrostatic pressure (HP, (10–12) × 108 Pa) on thermally stimulated phase decomposition of silicon suboxide layers processed at 450–1000 °C was investigated by infrared spectroscopy and photoluminescence measurements. HP stimulates decomposition of non‐stoichiometric SiOx most efficiently at about 450 °C. In spite of enhanced SiOx decomposition, visible photoluminescence appears in HP‐treated samples at higher annealing temperatures in comparison to those annealed under ambient pressure (AP, 105 Pa). Contrary to that, application of HP results in essential enhancement of near‐infrared emission at lower annealing temperatures as compared to processing under AP. This can be related to pressure‐stimulated crystallization of Si inclusions. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)