Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy

In this work we have compared the sub-bandgap absorptance of nominally undoped GaN samples grown under different conditions. The absorptance is measured using standard transmission measurements and transverse photothermal deflection spectroscopy (PDS). The sub-bandgap absorptance is dominated by an...

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Veröffentlicht in:	Journal of crystal growth 2008-11, Vol.310 (23), p.4747-4750
Hauptverfasser:	Lobo, Neysha, Kadir, Abdul, Laskar, Masihhur R., Shah, A.P., Gokhale, M.R., Rahman, A.A., Arora, B.M., Narasimhan, K.L., Bhattacharya, Arnab
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Defects A1. Impurities A3. Metalorganic vapor phase epitaxy B1. Gallium nitride Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Physics Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation Thin film structure and morphology Vapor phase epitaxy growth from vapor phase
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Zusammenfassung:	In this work we have compared the sub-bandgap absorptance of nominally undoped GaN samples grown under different conditions. The absorptance is measured using standard transmission measurements and transverse photothermal deflection spectroscopy (PDS). The sub-bandgap absorptance is dominated by an exponential Urbach tail (3.0–3.42 eV) and a defect absorptance (energy range
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2008.08.022