MOVPE growth of Ga(As)SbN on GaSb substrates

GaSb 1− y N y and GaAs 1− y − z Sb y N z alloys on GaSb substrates were grown by metalorganic vapor phase epitaxy (MOVPE) as potential materials for mid-infrared wavelength emission. Nitrogen incorporation was found to increase with the presence of As in GaAsSbN when compared with that of GaSbN. Low...

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Veröffentlicht in:	Journal of crystal growth 2008-11, Vol.310 (23), p.4839-4842
Hauptverfasser:	Huang, J.Y.T., Mawst, L.J., Jha, S., Kuech, T.F., Wang, D., Shterengas, L., Belenky, G., Meyer, J.R., Vurgaftman, I.
Format:	Artikel
Sprache:	eng
Schlagworte:	A3. Metalorganic chemical vapor deposition B1. Antimonides B1. Nitrides B2. Semiconducting III–V materials Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation Vapor phase epitaxy growth from vapor phase
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Zusammenfassung:	GaSb 1− y N y and GaAs 1− y − z Sb y N z alloys on GaSb substrates were grown by metalorganic vapor phase epitaxy (MOVPE) as potential materials for mid-infrared wavelength emission. Nitrogen incorporation was found to increase with the presence of As in GaAsSbN when compared with that of GaSbN. Low-temperature (LT) photoluminescence (PL) measurements indicated the co-addition of nitrogen and arsenic reduced the energy bandgap relative to that of GaSb. LT (16 K) PL emission near 2.25 μm was observed from GaAsSbN with an arsenic content of ∼10% and a nitrogen content of ∼0.08%.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2008.08.026