MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applications

AlGaN/GaN superlattice structures have been deposited on (0 0 0 1) ZnO substrates by metalorganic vapor phase epitaxy. The growth conditions were first optimized on GaN templates using N 2 as carrier gas at relatively low temperature (

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of crystal growth 2008-11, Vol.310 (23), p.4904-4907
Hauptverfasser:	Yu, Hongbo, Wang, Shenjie, Li, Nola, Fenwick, William, Melton, Andrew, Klein, B., Ferguson, Ian
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. X-ray diffraction A1. ZnO substrate A3. Organometallic vapor phase epitaxy B1. Nitrides B2. Semiconducting materials Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Photoluminescence Physics Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation Vapor phase epitaxy growth from vapor phase
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Beschreibung
Zusammenfassung:	AlGaN/GaN superlattice structures have been deposited on (0 0 0 1) ZnO substrates by metalorganic vapor phase epitaxy. The growth conditions were first optimized on GaN templates using N 2 as carrier gas at relatively low temperature (
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2008.07.071