MOVPE growth of antimonide-containing alloy materials for long wavelength applications
GaAs-based heterostructures comprised of GaAs 1− x N x –GaAs 1− y Sb y ( x
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| Veröffentlicht in: | Journal of crystal growth 2008-11, Vol.310 (23), p.4826-4830 |
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| container_title | Journal of crystal growth |
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| creator | Kuech, T.F. Khandekar, A.A. Rathi, M. Mawst, L.J. Huang, J.Y.T. Song, Xueyan Babcock, S.E. Meyer, J.R. Vurgaftman, I. |
| description | GaAs-based heterostructures comprised of GaAs
1−
x
N
x
–GaAs
1−
y
Sb
y
(
x |
| doi_str_mv | 10.1016/j.jcrysgro.2008.09.006 |
| format | Article |
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1−
x
N
x
–GaAs
1−
y
Sb
y
(
x<0.03,
y<0.35) multiple quantum wells (MQW) that utilize ‘W’-shaped type-II transitions have potential for realizing high-performance monolithic VCSELs and edge-emitting lasers with low temperature sensitivity in the 1.55
μm wavelength region. Metal-organic vapor-phase epitaxy (MOVPE) growth of GaAsSb is complicated by both thermodynamically driven phase separation and kinetic effects that arise from incomplete thermal decomposition of methyl- and hydride precursors at typical growth temperatures. The impact of growth chemistry on the formation of strained and pseudomorphic films was studied through the growth of relaxed GaAsSb films and multi-period pseudomorphic GaAsSb/GaAs superlattices. Trimethyl- and triethyl-gallium and trimethyl- and triethyl-antimony were used in a variety of combinations. The observed variations of the Sb incorporation efficiency for relaxed and strained films with growth conditions are not predicted by the existing thermodynamic models of the growth, indicating a coupling of the surface growth chemistry and the strain-induced changes in the surface stoichiometry. Through modification of the growth chemistry and process conditions, an extended range of Sb incorporation was realized as well as enhanced control over the alloy composition in strained layers. These achievements lead directly to an extended wavelength range in type-II MQW structures.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2008.09.006</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Adsorption ; A1. Computer simulation ; A1. Desorption ; A1. Growth models ; A3. Metal-organic vapor-phase epitaxy ; B1. Antimonides ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Equations of state, phase equilibria, and phase transitions ; Exact sciences and technology ; Materials science ; Methods of crystal growth; physics of crystal growth ; Methods of deposition of films and coatings; film growth and epitaxy ; Physics ; Solid surfaces and solid-solid interfaces ; Solubility, segregation, and mixing; phase separation ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation ; Vapor phase epitaxy; growth from vapor phase</subject><ispartof>Journal of crystal growth, 2008-11, Vol.310 (23), p.4826-4830</ispartof><rights>2008 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c373t-1b3de407730d841a5f0f4de79caf5b80ec106b20574e4e925fd73e1ea4b5113b3</citedby><cites>FETCH-LOGICAL-c373t-1b3de407730d841a5f0f4de79caf5b80ec106b20574e4e925fd73e1ea4b5113b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jcrysgro.2008.09.006$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21021825$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kuech, T.F.</creatorcontrib><creatorcontrib>Khandekar, A.A.</creatorcontrib><creatorcontrib>Rathi, M.</creatorcontrib><creatorcontrib>Mawst, L.J.</creatorcontrib><creatorcontrib>Huang, J.Y.T.</creatorcontrib><creatorcontrib>Song, Xueyan</creatorcontrib><creatorcontrib>Babcock, S.E.</creatorcontrib><creatorcontrib>Meyer, J.R.</creatorcontrib><creatorcontrib>Vurgaftman, I.</creatorcontrib><title>MOVPE growth of antimonide-containing alloy materials for long wavelength applications</title><title>Journal of crystal growth</title><description>GaAs-based heterostructures comprised of GaAs
1−
x
N
x
–GaAs
1−
y
Sb
y
(
x<0.03,
y<0.35) multiple quantum wells (MQW) that utilize ‘W’-shaped type-II transitions have potential for realizing high-performance monolithic VCSELs and edge-emitting lasers with low temperature sensitivity in the 1.55
μm wavelength region. Metal-organic vapor-phase epitaxy (MOVPE) growth of GaAsSb is complicated by both thermodynamically driven phase separation and kinetic effects that arise from incomplete thermal decomposition of methyl- and hydride precursors at typical growth temperatures. The impact of growth chemistry on the formation of strained and pseudomorphic films was studied through the growth of relaxed GaAsSb films and multi-period pseudomorphic GaAsSb/GaAs superlattices. Trimethyl- and triethyl-gallium and trimethyl- and triethyl-antimony were used in a variety of combinations. The observed variations of the Sb incorporation efficiency for relaxed and strained films with growth conditions are not predicted by the existing thermodynamic models of the growth, indicating a coupling of the surface growth chemistry and the strain-induced changes in the surface stoichiometry. Through modification of the growth chemistry and process conditions, an extended range of Sb incorporation was realized as well as enhanced control over the alloy composition in strained layers. These achievements lead directly to an extended wavelength range in type-II MQW structures.</description><subject>A1. Adsorption</subject><subject>A1. Computer simulation</subject><subject>A1. Desorption</subject><subject>A1. Growth models</subject><subject>A3. Metal-organic vapor-phase epitaxy</subject><subject>B1. Antimonides</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Equations of state, phase equilibria, and phase transitions</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Physics</subject><subject>Solid surfaces and solid-solid interfaces</subject><subject>Solubility, segregation, and mixing; phase separation</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><subject>Vapor phase epitaxy; growth from vapor phase</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNqFkMtOwzAQRS0EEuXxCygb2CWM7bhJdiDESwLBAthajjMurly72KGof4-rAls2noXPmau5hJxQqCjQ6fm8muu4TrMYKgbQVtBVANMdMqFtw0sBwHbJJL-sBFa3--QgpTlANilMyNvj09vzdZHlr_G9CKZQfrSL4O2ApQ5-VNZbPyuUc2FdLNSI0SqXChNi4UL--FIrdOhnWVbLpbNajTb4dET2TObw-Gcekteb65eru_Lh6fb-6vKh1LzhY0l7PmANTcNhaGuqhAFTD9h0WhnRt4CawrRnIJoaa-yYMEPDkaKqe0Ep7_khOdvuXcbw8YlplAubNDqnPIbPJLkQwNtOZHC6BXUMKUU0chntQsW1pCA3Ncq5_K1RbmqU0MlcYxZPfxJU0sqZqLy26c9mFBht2SbgYsthPndlMcqkLXqNg42oRzkE-1_UN1xojZs</recordid><startdate>20081115</startdate><enddate>20081115</enddate><creator>Kuech, T.F.</creator><creator>Khandekar, A.A.</creator><creator>Rathi, M.</creator><creator>Mawst, L.J.</creator><creator>Huang, J.Y.T.</creator><creator>Song, Xueyan</creator><creator>Babcock, S.E.</creator><creator>Meyer, J.R.</creator><creator>Vurgaftman, I.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20081115</creationdate><title>MOVPE growth of antimonide-containing alloy materials for long wavelength applications</title><author>Kuech, T.F. ; Khandekar, A.A. ; Rathi, M. ; Mawst, L.J. ; Huang, J.Y.T. ; Song, Xueyan ; Babcock, S.E. ; Meyer, J.R. ; Vurgaftman, I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c373t-1b3de407730d841a5f0f4de79caf5b80ec106b20574e4e925fd73e1ea4b5113b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>A1. Adsorption</topic><topic>A1. Computer simulation</topic><topic>A1. Desorption</topic><topic>A1. Growth models</topic><topic>A3. Metal-organic vapor-phase epitaxy</topic><topic>B1. Antimonides</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Equations of state, phase equilibria, and phase transitions</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Solubility, segregation, and mixing; phase separation</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><topic>Vapor phase epitaxy; growth from vapor phase</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kuech, T.F.</creatorcontrib><creatorcontrib>Khandekar, A.A.</creatorcontrib><creatorcontrib>Rathi, M.</creatorcontrib><creatorcontrib>Mawst, L.J.</creatorcontrib><creatorcontrib>Huang, J.Y.T.</creatorcontrib><creatorcontrib>Song, Xueyan</creatorcontrib><creatorcontrib>Babcock, S.E.</creatorcontrib><creatorcontrib>Meyer, J.R.</creatorcontrib><creatorcontrib>Vurgaftman, I.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kuech, T.F.</au><au>Khandekar, A.A.</au><au>Rathi, M.</au><au>Mawst, L.J.</au><au>Huang, J.Y.T.</au><au>Song, Xueyan</au><au>Babcock, S.E.</au><au>Meyer, J.R.</au><au>Vurgaftman, I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>MOVPE growth of antimonide-containing alloy materials for long wavelength applications</atitle><jtitle>Journal of crystal growth</jtitle><date>2008-11-15</date><risdate>2008</risdate><volume>310</volume><issue>23</issue><spage>4826</spage><epage>4830</epage><pages>4826-4830</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>GaAs-based heterostructures comprised of GaAs
1−
x
N
x
–GaAs
1−
y
Sb
y
(
x<0.03,
y<0.35) multiple quantum wells (MQW) that utilize ‘W’-shaped type-II transitions have potential for realizing high-performance monolithic VCSELs and edge-emitting lasers with low temperature sensitivity in the 1.55
μm wavelength region. Metal-organic vapor-phase epitaxy (MOVPE) growth of GaAsSb is complicated by both thermodynamically driven phase separation and kinetic effects that arise from incomplete thermal decomposition of methyl- and hydride precursors at typical growth temperatures. The impact of growth chemistry on the formation of strained and pseudomorphic films was studied through the growth of relaxed GaAsSb films and multi-period pseudomorphic GaAsSb/GaAs superlattices. Trimethyl- and triethyl-gallium and trimethyl- and triethyl-antimony were used in a variety of combinations. The observed variations of the Sb incorporation efficiency for relaxed and strained films with growth conditions are not predicted by the existing thermodynamic models of the growth, indicating a coupling of the surface growth chemistry and the strain-induced changes in the surface stoichiometry. Through modification of the growth chemistry and process conditions, an extended range of Sb incorporation was realized as well as enhanced control over the alloy composition in strained layers. These achievements lead directly to an extended wavelength range in type-II MQW structures.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2008.09.006</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
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| ispartof | Journal of crystal growth, 2008-11, Vol.310 (23), p.4826-4830 |
| issn | 0022-0248 1873-5002 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_35503895 |
| source | ScienceDirect Journals (5 years ago - present) |
| subjects | A1. Adsorption A1. Computer simulation A1. Desorption A1. Growth models A3. Metal-organic vapor-phase epitaxy B1. Antimonides Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Equations of state, phase equilibria, and phase transitions Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Physics Solid surfaces and solid-solid interfaces Solubility, segregation, and mixing phase separation Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation Vapor phase epitaxy growth from vapor phase |
| title | MOVPE growth of antimonide-containing alloy materials for long wavelength applications |
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