MOVPE growth of antimonide-containing alloy materials for long wavelength applications

GaAs-based heterostructures comprised of GaAs 1− x N x –GaAs 1− y Sb y ( x

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of crystal growth 2008-11, Vol.310 (23), p.4826-4830
Hauptverfasser:	Kuech, T.F., Khandekar, A.A., Rathi, M., Mawst, L.J., Huang, J.Y.T., Song, Xueyan, Babcock, S.E., Meyer, J.R., Vurgaftman, I.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Adsorption A1. Computer simulation A1. Desorption A1. Growth models A3. Metal-organic vapor-phase epitaxy B1. Antimonides Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Equations of state, phase equilibria, and phase transitions Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Physics Solid surfaces and solid-solid interfaces Solubility, segregation, and mixing phase separation Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation Vapor phase epitaxy growth from vapor phase
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Beschreibung
Zusammenfassung:	GaAs-based heterostructures comprised of GaAs 1− x N x –GaAs 1− y Sb y ( x
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2008.09.006