Phosphorous doped SOG as a pre-metal-dielectric for sub-50 nm technology nodes
The goal of this work is to find a substitute for chemically-vapour-deposited (CVD) Borophosphosilicate glass (BPSG), which is currently used as a pre-metal dielectric (PMD) for sub 50 nm. Two spin-on candidates are considered, out of which one contains four weight percent (wt.%) of phosphor. First,...
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Veröffentlicht in: | Microelectronic engineering 2008-10, Vol.85 (10), p.2085-2088 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The goal of this work is to find a substitute for chemically-vapour-deposited (CVD) Borophosphosilicate glass (BPSG), which is currently used as a pre-metal dielectric (PMD) for sub 50
nm. Two spin-on candidates are considered, out of which one contains four weight percent (wt.%) of phosphor. First, their material properties are discussed and then their integration challenges are presented. Particularly, issues like thermal budget, direct CMP capability and compatibility to wet-cleans are explored. Then the suitable candidate is tested electrically. |
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ISSN: | 0167-9317 1873-5568 |
DOI: | 10.1016/j.mee.2008.04.002 |