Phosphorous doped SOG as a pre-metal-dielectric for sub-50 nm technology nodes

The goal of this work is to find a substitute for chemically-vapour-deposited (CVD) Borophosphosilicate glass (BPSG), which is currently used as a pre-metal dielectric (PMD) for sub 50 nm. Two spin-on candidates are considered, out of which one contains four weight percent (wt.%) of phosphor. First,...

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Veröffentlicht in:Microelectronic engineering 2008-10, Vol.85 (10), p.2085-2088
Hauptverfasser: Das, Arabinda, Stavrev, Momtchil, Prenz, Heike, Schardin, Markus, Uhlig, Ines, Graf, Werner, Sperlich, Hans-Peter
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Sprache:eng
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Zusammenfassung:The goal of this work is to find a substitute for chemically-vapour-deposited (CVD) Borophosphosilicate glass (BPSG), which is currently used as a pre-metal dielectric (PMD) for sub 50 nm. Two spin-on candidates are considered, out of which one contains four weight percent (wt.%) of phosphor. First, their material properties are discussed and then their integration challenges are presented. Particularly, issues like thermal budget, direct CMP capability and compatibility to wet-cleans are explored. Then the suitable candidate is tested electrically.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2008.04.002