Morphological Control of Single-Crystalline Silicon Nanowire Arrays near Room Temperature

Control of the orientation, diameter, and length of silicon nanowires (SiNWs) is achieved in large‐scale single‐crystalline SiNW arrays fabricated by a statistical electroless metal deposition technique. Taguchi methods are employed to optimize the diameter control and to understand the influence of all processing factors on the growth. The 〈100〉 directions are found to be the preferred crystallographic orientation of the growing SiNWs (see figure).