Growth and anisotropy of La(O, F)FeAs thin films deposited by pulsed laser deposition

LaFeAsO1-xFx thin films were deposited successfully on (001)-oriented LaAlO3 and MgO substrates from stoichiometric LaFeAsO1-xFx polycrystalline targets with fluorine concentrations up to x = 0.25 by pulsed laser deposition (PLD). Room temperature deposition and post annealing of the films yield films with a pronounced c-axis texture and a strong biaxial in-plane orientation. Transport measurements show metallic resistance and the onset of superconductivity at 11 K. mu0Hc 2(T) was determined by resistive measurements and yield mu0Hc 2 values of 3 T at 3.6 K for and 6 T at 6.4 K for.