Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes
Wide-bandgap III-nitride-based photodetectors are excellent candidates for high-sensitivity and cost-effective detection of photons in the ultraviolet and near-UV spectral region. Owing to the superior intrinsic properties of III-nitride materials for the detection of photons with short wavelengths...
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| Veröffentlicht in: | Journal of crystal growth 2008-11, Vol.310 (23), p.5217-5222 |
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| container_issue | 23 |
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| container_title | Journal of crystal growth |
| container_volume | 310 |
| creator | Dupuis, Russell D. Ryou, Jae-Hyun Shen, Shyh-Chiang Yoder, P. Douglas Zhang, Yun Kim, Hee Jin Choi, Suk Lochner, Zachary |
| description | Wide-bandgap III-nitride-based photodetectors are excellent candidates for high-sensitivity and cost-effective detection of photons in the ultraviolet and near-UV spectral region. Owing to the superior intrinsic properties of III-nitride materials for the detection of photons with short wavelengths
λ |
| doi_str_mv | 10.1016/j.jcrysgro.2008.07.107 |
| format | Article |
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λ<340
nm, and the recent improvement of materials and device technologies, III-nitride photodetectors have great potential to be of practical and commercial importance for various sensing, monitoring, and control applications. In this paper, we describe various aspects of the design, materials growth, and device fabrication of GaN-based photodetectors and the recent advances in the development of high-quality photodetectors based on GaN UV detection, including the demonstration of Geiger-mode operation. Finally, we discuss some of the important areas needing to be developed further.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2008.07.107</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A3. Metalorganic chemical vapor deposition ; Applied sciences ; B2. Semiconducting III–V materials ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Cross-disciplinary physics: materials science; rheology ; Electronics ; Exact sciences and technology ; Materials science ; Methods of crystal growth; physics of crystal growth ; Methods of deposition of films and coatings; film growth and epitaxy ; Optoelectronic devices ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><ispartof>Journal of crystal growth, 2008-11, Vol.310 (23), p.5217-5222</ispartof><rights>2008 Elsevier B.V.</rights><rights>2009 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c439t-7fcd9e81c755f593dc1fc17dc8fb0a0f5a83dba5b91e0fd3730f817422ea60263</citedby><cites>FETCH-LOGICAL-c439t-7fcd9e81c755f593dc1fc17dc8fb0a0f5a83dba5b91e0fd3730f817422ea60263</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0022024808007008$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3536,23910,23911,25119,27903,27904,65309</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21021917$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Dupuis, Russell D.</creatorcontrib><creatorcontrib>Ryou, Jae-Hyun</creatorcontrib><creatorcontrib>Shen, Shyh-Chiang</creatorcontrib><creatorcontrib>Yoder, P. Douglas</creatorcontrib><creatorcontrib>Zhang, Yun</creatorcontrib><creatorcontrib>Kim, Hee Jin</creatorcontrib><creatorcontrib>Choi, Suk</creatorcontrib><creatorcontrib>Lochner, Zachary</creatorcontrib><title>Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes</title><title>Journal of crystal growth</title><description>Wide-bandgap III-nitride-based photodetectors are excellent candidates for high-sensitivity and cost-effective detection of photons in the ultraviolet and near-UV spectral region. Owing to the superior intrinsic properties of III-nitride materials for the detection of photons with short wavelengths
λ<340
nm, and the recent improvement of materials and device technologies, III-nitride photodetectors have great potential to be of practical and commercial importance for various sensing, monitoring, and control applications. In this paper, we describe various aspects of the design, materials growth, and device fabrication of GaN-based photodetectors and the recent advances in the development of high-quality photodetectors based on GaN UV detection, including the demonstration of Geiger-mode operation. Finally, we discuss some of the important areas needing to be developed further.</description><subject>A3. Metalorganic chemical vapor deposition</subject><subject>Applied sciences</subject><subject>B2. Semiconducting III–V materials</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>Optoelectronic devices</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Solid state devices</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dupuis, Russell D.</creatorcontrib><creatorcontrib>Ryou, Jae-Hyun</creatorcontrib><creatorcontrib>Shen, Shyh-Chiang</creatorcontrib><creatorcontrib>Yoder, P. 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λ<340
nm, and the recent improvement of materials and device technologies, III-nitride photodetectors have great potential to be of practical and commercial importance for various sensing, monitoring, and control applications. In this paper, we describe various aspects of the design, materials growth, and device fabrication of GaN-based photodetectors and the recent advances in the development of high-quality photodetectors based on GaN UV detection, including the demonstration of Geiger-mode operation. Finally, we discuss some of the important areas needing to be developed further.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2008.07.107</doi><tpages>6</tpages></addata></record> |
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| subjects | A3. Metalorganic chemical vapor deposition Applied sciences B2. Semiconducting III–V materials Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Optoelectronic devices Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation |
| title | Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes |
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