Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes

Wide-bandgap III-nitride-based photodetectors are excellent candidates for high-sensitivity and cost-effective detection of photons in the ultraviolet and near-UV spectral region. Owing to the superior intrinsic properties of III-nitride materials for the detection of photons with short wavelengths...

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Veröffentlicht in:	Journal of crystal growth 2008-11, Vol.310 (23), p.5217-5222
Hauptverfasser:	Dupuis, Russell D., Ryou, Jae-Hyun, Shen, Shyh-Chiang, Yoder, P. Douglas, Zhang, Yun, Kim, Hee Jin, Choi, Suk, Lochner, Zachary
Format:	Artikel
Sprache:	eng
Schlagworte:	A3. Metalorganic chemical vapor deposition Applied sciences B2. Semiconducting III–V materials Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Electronics Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Methods of deposition of films and coatings film growth and epitaxy Optoelectronic devices Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation
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Beschreibung
Zusammenfassung:	Wide-bandgap III-nitride-based photodetectors are excellent candidates for high-sensitivity and cost-effective detection of photons in the ultraviolet and near-UV spectral region. Owing to the superior intrinsic properties of III-nitride materials for the detection of photons with short wavelengths λ
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2008.07.107