Effects of N doping on ZnO thin films grown by MOVPE

Effects of N doping on zinc oxide (ZnO) thin films by metal organic vapor phase epitaxy (MOVPE) using diethyl zinc (DEZn) and O 2 precursors and NH 3 as the doping source have been studied. N-doped ZnO thin films were deposited on c-plane sapphire substrates with NH 3 flow rates from 0.2% to 4% duri...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of crystal growth 2008-11, Vol.310 (23), p.5011-5015
Hauptverfasser: Zaidi, Tahir, Fenwick, William E., Melton, Andrew, Li, Nola, Gupta, Shalini, Yu, Hongbo, Ougazzaden, Abdallah, Ferguson, Ian
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Effects of N doping on zinc oxide (ZnO) thin films by metal organic vapor phase epitaxy (MOVPE) using diethyl zinc (DEZn) and O 2 precursors and NH 3 as the doping source have been studied. N-doped ZnO thin films were deposited on c-plane sapphire substrates with NH 3 flow rates from 0.2% to 4% during growth. Highly resistive ZnO thin films with p-type carrier concentrations of 4.24×10 14 cm −3 and mobility of 16.55 cm 2/Vs were obtained. Resistivity for the as-grown films on the order of 2.3×10 6 Ω cm was observed. The PL results of the N-doped ZnO show suppression of the band-edge luminescence and two broad peaks centered at 480 and 600 nm attributable to deep N acceptor luminescence were seen. Rapid thermal annealing at 800 °C in N 2 ambient turned all the N-doped ZnO films, irrespective of doping concentration, to highly conductive n-type with carrier concentration on the order of 5.92×10 18 cm −3, mobility on the order of 34.91 cm 2/Vs and resistivity of 0.09 Ω cm.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2008.07.124