Effects of N doping on ZnO thin films grown by MOVPE
Effects of N doping on zinc oxide (ZnO) thin films by metal organic vapor phase epitaxy (MOVPE) using diethyl zinc (DEZn) and O 2 precursors and NH 3 as the doping source have been studied. N-doped ZnO thin films were deposited on c-plane sapphire substrates with NH 3 flow rates from 0.2% to 4% duri...
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Veröffentlicht in: | Journal of crystal growth 2008-11, Vol.310 (23), p.5011-5015 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Effects of N doping on zinc oxide (ZnO) thin films by metal organic vapor phase epitaxy (MOVPE) using diethyl zinc (DEZn) and O
2 precursors and NH
3 as the doping source have been studied. N-doped ZnO thin films were deposited on c-plane sapphire substrates with NH
3 flow rates from 0.2% to 4% during growth. Highly resistive ZnO thin films with p-type carrier concentrations of 4.24×10
14
cm
−3 and mobility of 16.55
cm
2/Vs were obtained. Resistivity for the as-grown films on the order of 2.3×10
6
Ω
cm was observed. The PL results of the N-doped ZnO show suppression of the band-edge luminescence and two broad peaks centered at 480 and 600
nm attributable to deep N acceptor luminescence were seen. Rapid thermal annealing at 800
°C in N
2 ambient turned all the N-doped ZnO films, irrespective of doping concentration, to highly conductive n-type with carrier concentration on the order of 5.92×10
18
cm
−3, mobility on the order of 34.91
cm
2/Vs and resistivity of 0.09
Ω
cm. |
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ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2008.07.124 |