Fabrication of Ultra-Shallow Junctions on 300 mm Wafers Using the Plasma Immersion Implanter PULSION(R) Followed by Spike Annealing Using LEVITOR Furnace

Thanks to the European Project SEA-NET, an industrial version of the IBS Plasma Ion Implantation tool has been installed in LETI for the fabrication of Ultra-Shallow Junction for 45 & 32 nm CMOS on 200 and 300 mm wafers. In this study, we present first doping results on 300 mm wafers using BF3 p...

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Hauptverfasser:	Torregrosa, Frank, Etienne, Hasnaa, Sempere, Guillaume, Mathieu, Gilles, Roux, Laurent, Milesi, Frederic, Gonzatti, Frederic, Pages, Xavier
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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