Fabrication of Ultra-Shallow Junctions on 300 mm Wafers Using the Plasma Immersion Implanter PULSION(R) Followed by Spike Annealing Using LEVITOR Furnace

Thanks to the European Project SEA-NET, an industrial version of the IBS Plasma Ion Implantation tool has been installed in LETI for the fabrication of Ultra-Shallow Junction for 45 & 32 nm CMOS on 200 and 300 mm wafers. In this study, we present first doping results on 300 mm wafers using BF3 plasma. Annealing after PULSION implantation is perfomed by the ASM furnace LEVITOR. This tool, which works on conduction heating is emissivity independent for temperature control and allows reaching high ramp up and ramp down speeds (up to 900 deg C/s). Main characteristics of as implanted wafers are presented (metal contamination 2E10/cm2, SIMS depth profiles down to 5 nm). Then the effect of convection gas in the annealing process on sheet resistance, junction depth and uniformity is presented.