Adsorption of trisilylamine on the Si(100) surface

Adsorption of trisilylamine (TSA) on the Si(100) surface has been studied using temperature programmed desorption (TPD) and time‐of‐flight electron stimulated desorption (TOFESD). TPD spectra exhibit the presence of three desorption states denoted by β1, β2, and β3 associated with the presence of a mono‐, di‐, and tri‐hydride state respectively. This behavior is identical with previously observed desorption studies resulting from atomic hydrogen adsorption, indicating that the nitrogen species in the adsorbate has minimal impact on the surface structure of the hydride. Preliminary electron irradiation studies are reported and indicate that the formation of a thin silicon nitride layer is induced as a result of the irradiation. Copyright © 2008 John Wiley & Sons, Ltd.