Al2O3/ZrO2 Nanolaminates as Ultrahigh Gas-Diffusion Barriers-A Strategy for Reliable Encapsulation of Organic Electronics

Al2O3/ZrO2 Nanolaminates as Ultrahigh Gas-Diffusion Barriers-A Strategy for Reliable Encapsulation of Organic Electronics

Highly efficient gas‐diffusion barriers based on nanolaminates of alternating Al2O3 and ZrO2 layers grown at 80 °C by atomic‐layer deposition are presented. Ultralow water‐vapor permeation rates are reported, and a dramatic reduction of statistical defects on larger areas was found compared to singl...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Weinheim) 2009-05, Vol.21 (18), p.1845-1849
Hauptverfasser: Meyer, Jens, Görrn, Patrick, Bertram, Franz, Hamwi, Sami, Winkler, Thomas, Johannes, Hans-Hermann, Weimann, Thomas, Hinze, Peter, Riedl, Thomas, Kowalsky, Wolfgang
Format: Artikel
Sprache:eng
Schlagworte:
nanolaminates
organic electronics
organic light-emitting diodes
thin films
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Highly efficient gas‐diffusion barriers based on nanolaminates of alternating Al2O3 and ZrO2 layers grown at 80 °C by atomic‐layer deposition are presented. Ultralow water‐vapor permeation rates are reported, and a dramatic reduction of statistical defects on larger areas was found compared to single Al2O3 layers. This study provides a concept for the encapsulation of organic optoelectronic devices.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200803440