Studies and correlation among the structural, optical and electrical parameters of spray-deposited tin oxide (SnO 2) thin films with different substrate temperatures
Thin films of tin oxide (SnO 2) have been grown by using a simple and economical spray pyrolysis technique. The deposition temperature was optimized to 450 °C, while the concentration and quantity of the solution were kept fixed at 2 M and 20 ml, respectively. X-ray diffraction patterns (XRD) studie...
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container_title | Physica. B, Condensed matter |
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creator | Kasar, R.R. Deshpande, N.G. Gudage, Y.G. Vyas, J.C. Sharma, Ramphal |
description | Thin films of tin oxide (SnO
2) have been grown by using a simple and economical spray pyrolysis technique. The deposition temperature was optimized to 450
°C, while the concentration and quantity of the solution were kept fixed at 2
M and 20
ml, respectively. X-ray diffraction patterns (XRD) studies reveal that the material deposited is polycrystalline SnO
2 having primitive tetragonal structure. The lattice parameters, grain size, microstrain and dislocation densities were calculated and correlated with the substrate temperature. The transmission spectra showed a sharp decrease in transmission at the absorption edge and a good form of interference pattern. The figure of merit has been calculated from transmission spectra. Low sheet resistance ∼16.03
Ω/sq
cm and high visible transmission (∼86%) were obtained when the films were deposited at the substrate temperature of 450
°C. From electrical measurements, the resistivity was found to be 11.5×10
−4
Ω
cm, while the carrier concentration was calculated to be 8.81×10
21
cm
−3. |
doi_str_mv | 10.1016/j.physb.2008.06.023 |
format | Article |
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2) have been grown by using a simple and economical spray pyrolysis technique. The deposition temperature was optimized to 450
°C, while the concentration and quantity of the solution were kept fixed at 2
M and 20
ml, respectively. X-ray diffraction patterns (XRD) studies reveal that the material deposited is polycrystalline SnO
2 having primitive tetragonal structure. The lattice parameters, grain size, microstrain and dislocation densities were calculated and correlated with the substrate temperature. The transmission spectra showed a sharp decrease in transmission at the absorption edge and a good form of interference pattern. The figure of merit has been calculated from transmission spectra. Low sheet resistance ∼16.03
Ω/sq
cm and high visible transmission (∼86%) were obtained when the films were deposited at the substrate temperature of 450
°C. From electrical measurements, the resistivity was found to be 11.5×10
−4
Ω
cm, while the carrier concentration was calculated to be 8.81×10
21
cm
−3.</description><identifier>ISSN: 0921-4526</identifier><identifier>EISSN: 1873-2135</identifier><identifier>DOI: 10.1016/j.physb.2008.06.023</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport phenomena in thin films and low-dimensional structures ; Exact sciences and technology ; Figure of merit ; Hall effect measurements ; Low-field transport and mobility; piezoresistance ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Other semiconductors ; Physics ; Spray pyrolysis ; Structural analysis ; Structure and morphology; thickness ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology ; Tin oxide ; Transmittance spectra</subject><ispartof>Physica. B, Condensed matter, 2008-10, Vol.403 (19), p.3724-3729</ispartof><rights>2008 Elsevier B.V.</rights><rights>2008 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c364t-17afec6b2a9dec5d377d600e2fc3d552195e203519e40a8fe8fb02ccd70318643</citedby><cites>FETCH-LOGICAL-c364t-17afec6b2a9dec5d377d600e2fc3d552195e203519e40a8fe8fb02ccd70318643</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0921452608002901$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27903,27904,65309</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=20719062$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kasar, R.R.</creatorcontrib><creatorcontrib>Deshpande, N.G.</creatorcontrib><creatorcontrib>Gudage, Y.G.</creatorcontrib><creatorcontrib>Vyas, J.C.</creatorcontrib><creatorcontrib>Sharma, Ramphal</creatorcontrib><title>Studies and correlation among the structural, optical and electrical parameters of spray-deposited tin oxide (SnO 2) thin films with different substrate temperatures</title><title>Physica. B, Condensed matter</title><description>Thin films of tin oxide (SnO
2) have been grown by using a simple and economical spray pyrolysis technique. The deposition temperature was optimized to 450
°C, while the concentration and quantity of the solution were kept fixed at 2
M and 20
ml, respectively. X-ray diffraction patterns (XRD) studies reveal that the material deposited is polycrystalline SnO
2 having primitive tetragonal structure. The lattice parameters, grain size, microstrain and dislocation densities were calculated and correlated with the substrate temperature. The transmission spectra showed a sharp decrease in transmission at the absorption edge and a good form of interference pattern. The figure of merit has been calculated from transmission spectra. Low sheet resistance ∼16.03
Ω/sq
cm and high visible transmission (∼86%) were obtained when the films were deposited at the substrate temperature of 450
°C. From electrical measurements, the resistivity was found to be 11.5×10
−4
Ω
cm, while the carrier concentration was calculated to be 8.81×10
21
cm
−3.</description><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport phenomena in thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Figure of merit</subject><subject>Hall effect measurements</subject><subject>Low-field transport and mobility; piezoresistance</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Other semiconductors</subject><subject>Physics</subject><subject>Spray pyrolysis</subject><subject>Structural analysis</subject><subject>Structure and morphology; thickness</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><subject>Tin oxide</subject><subject>Transmittance spectra</subject><issn>0921-4526</issn><issn>1873-2135</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2008</creationdate><recordtype>article</recordtype><recordid>eNp9kc1u1DAUhSNEJYaWJ2DjDQgkEvyTOMmCBar4qVSpi8La8tjXjEeJHXwdYB6o74lnpmKJN_a1vnOu7j1V9ZLRhlEm3--bZXfAbcMpHRoqG8rFk2rDhl7UnInuabWhI2d123H5rHqOuKflsJ5tqof7vFoPSHSwxMSUYNLZx0D0HMMPkndAMKfV5DXp6R2JS_ZGTycaJjA5ncpFJz1DhoQkOoJL0ofawhLRZ7Ak-0DiH2-BvLkPd4S_Lbbly_lpRvLb5x2x3jlIEDLBdVv66Qwkw7xAea0J8Kq6cHpCePF4X1bfP3_6dv21vr37cnP98bY2Qra5Zr12YOSW69GC6azoeyspBe6MsF3H2dgBp6JjI7RUDw4Gt6XcGNtTwQbZisvq9dl3SfHnCpjV7NHANOkAcUV1lPK2YwUUZ9CkiJjAqSX5WaeDYlQdI1F7dYpEHSNRVKoSSVG9erTXWNbmkg7G4z8ppz0bqeSF-3DmoMz6y0NSaDwEA9ansnNlo_9vn79w_acd</recordid><startdate>20081001</startdate><enddate>20081001</enddate><creator>Kasar, R.R.</creator><creator>Deshpande, N.G.</creator><creator>Gudage, Y.G.</creator><creator>Vyas, J.C.</creator><creator>Sharma, Ramphal</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20081001</creationdate><title>Studies and correlation among the structural, optical and electrical parameters of spray-deposited tin oxide (SnO 2) thin films with different substrate temperatures</title><author>Kasar, R.R. ; Deshpande, N.G. ; Gudage, Y.G. ; Vyas, J.C. ; Sharma, Ramphal</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c364t-17afec6b2a9dec5d377d600e2fc3d552195e203519e40a8fe8fb02ccd70318643</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2008</creationdate><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport phenomena in thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Figure of merit</topic><topic>Hall effect measurements</topic><topic>Low-field transport and mobility; piezoresistance</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Other semiconductors</topic><topic>Physics</topic><topic>Spray pyrolysis</topic><topic>Structural analysis</topic><topic>Structure and morphology; thickness</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><topic>Tin oxide</topic><topic>Transmittance spectra</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kasar, R.R.</creatorcontrib><creatorcontrib>Deshpande, N.G.</creatorcontrib><creatorcontrib>Gudage, Y.G.</creatorcontrib><creatorcontrib>Vyas, J.C.</creatorcontrib><creatorcontrib>Sharma, Ramphal</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica. B, Condensed matter</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kasar, R.R.</au><au>Deshpande, N.G.</au><au>Gudage, Y.G.</au><au>Vyas, J.C.</au><au>Sharma, Ramphal</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Studies and correlation among the structural, optical and electrical parameters of spray-deposited tin oxide (SnO 2) thin films with different substrate temperatures</atitle><jtitle>Physica. B, Condensed matter</jtitle><date>2008-10-01</date><risdate>2008</risdate><volume>403</volume><issue>19</issue><spage>3724</spage><epage>3729</epage><pages>3724-3729</pages><issn>0921-4526</issn><eissn>1873-2135</eissn><abstract>Thin films of tin oxide (SnO
2) have been grown by using a simple and economical spray pyrolysis technique. The deposition temperature was optimized to 450
°C, while the concentration and quantity of the solution were kept fixed at 2
M and 20
ml, respectively. X-ray diffraction patterns (XRD) studies reveal that the material deposited is polycrystalline SnO
2 having primitive tetragonal structure. The lattice parameters, grain size, microstrain and dislocation densities were calculated and correlated with the substrate temperature. The transmission spectra showed a sharp decrease in transmission at the absorption edge and a good form of interference pattern. The figure of merit has been calculated from transmission spectra. Low sheet resistance ∼16.03
Ω/sq
cm and high visible transmission (∼86%) were obtained when the films were deposited at the substrate temperature of 450
°C. From electrical measurements, the resistivity was found to be 11.5×10
−4
Ω
cm, while the carrier concentration was calculated to be 8.81×10
21
cm
−3.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.physb.2008.06.023</doi><tpages>6</tpages></addata></record> |
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subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Figure of merit Hall effect measurements Low-field transport and mobility piezoresistance Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Other semiconductors Physics Spray pyrolysis Structural analysis Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Tin oxide Transmittance spectra |
title | Studies and correlation among the structural, optical and electrical parameters of spray-deposited tin oxide (SnO 2) thin films with different substrate temperatures |
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