Growth of spectroscopic grade Cd(0.9)Zn(0.1)Te:In by THM technique

Growth of spectroscopic grade Cd(0.9)Zn(0.1)Te:In by THM technique

Large indium-doped detector grade (52 mm diameter, 1.1 kg) Cd(0.9)Zn(0.1)Te crystals have been grown by THM technique from Te-rich solution. The as-grown crystals showed the dark resistivity of 2x10(10) [Omega] cm and mobility life time product of electrons of 4-7x10(-3) cm(2)/V. A quasi-hemispheric...

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Veröffentlicht in:Journal of crystal growth 2009-12, Vol.312 (1), p.33-36
Hauptverfasser: Roy, U N, Gueorguiev, A, Weiller, S, Stein, J
Format: Artikel
Sprache:eng
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Zusammenfassung:Large indium-doped detector grade (52 mm diameter, 1.1 kg) Cd(0.9)Zn(0.1)Te crystals have been grown by THM technique from Te-rich solution. The as-grown crystals showed the dark resistivity of 2x10(10) [Omega] cm and mobility life time product of electrons of 4-7x10(-3) cm(2)/V. A quasi-hemispherical configuration was used in the device fabrication, which provides an economic way of electron only detector configuration. A resolution of 2% was achieved for the (137)Cs 662 keV gamma line at room temperature for the as-grown THM samples.
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2009.09.035