Flash-assist RTP for ultra-shallow junctions
Spike annealing using traditional tungsten-halogen lamps has been limited to effective times on the order of about 1.5 s or more. Kven though heating and cooling rates have been increased, the sharpness of the temperature profile around the peak cannot be improved significantly due to the relatively...
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| Veröffentlicht in: | JOM (1989) 2006-06, Vol.58 (6), p.32-34 |
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| container_end_page | 34 |
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| container_title | JOM (1989) |
| container_volume | 58 |
| creator | Camm, D M Gelpey, J C Thrum, T Stuart, G C McCoy, S |
| description | Spike annealing using traditional tungsten-halogen lamps has been limited to effective times on the order of about 1.5 s or more. Kven though heating and cooling rates have been increased, the sharpness of the temperature profile around the peak cannot be improved significantly due to the relatively large thermal mass of the lamps. Using a high-powered arc lamp with essentially zero thermal mass, the wafer can be heated to peak temperatures of typically 1,000° and the lamp turned off instantaneously. |
| doi_str_mv | 10.1007/s11837-006-0177-7 |
| format | Article |
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Kven though heating and cooling rates have been increased, the sharpness of the temperature profile around the peak cannot be improved significantly due to the relatively large thermal mass of the lamps. 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| fulltext | fulltext |
| identifier | ISSN: 1047-4838 |
| ispartof | JOM (1989), 2006-06, Vol.58 (6), p.32-34 |
| issn | 1047-4838 1543-1851 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_35166331 |
| source | Springer Nature - Complete Springer Journals |
| subjects | Annealing CMOS Cooling Heat Heat treating High temperature Innovations Lamps Power Semiconductor annealing Semiconductors Studies Thermal cycling |
| title | Flash-assist RTP for ultra-shallow junctions |
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