Flash-assist RTP for ultra-shallow junctions

Flash-assist RTP for ultra-shallow junctions

Spike annealing using traditional tungsten-halogen lamps has been limited to effective times on the order of about 1.5 s or more. Kven though heating and cooling rates have been increased, the sharpness of the temperature profile around the peak cannot be improved significantly due to the relatively...

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Veröffentlicht in:JOM (1989) 2006-06, Vol.58 (6), p.32-34
Hauptverfasser: Camm, D M, Gelpey, J C, Thrum, T, Stuart, G C, McCoy, S
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
CMOS
Cooling
Heat
Heat treating
High temperature
Innovations
Lamps
Power
Semiconductor annealing
Semiconductors
Studies
Thermal cycling
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Beschreibung
Zusammenfassung:Spike annealing using traditional tungsten-halogen lamps has been limited to effective times on the order of about 1.5 s or more. Kven though heating and cooling rates have been increased, the sharpness of the temperature profile around the peak cannot be improved significantly due to the relatively large thermal mass of the lamps. Using a high-powered arc lamp with essentially zero thermal mass, the wafer can be heated to peak temperatures of typically 1,000° and the lamp turned off instantaneously.
ISSN:1047-4838
1543-1851
DOI:10.1007/s11837-006-0177-7