Effect of Energetic Electron Irradiation on Graphene

Electron beam exposure is a commonly used tool for fabrication and imaging of graphene-based devices. Using Raman spectroscopy and electronic transport measurements, we have studied the effect of prolonged exposure of electron beams on exfoliated graphene on SiO(2)/Si substrates and the performance of electronic devices based on exfoliated graphene. Raman spectra indicate emergence of characteristic defects. Electronic transport measurements show an overall decrease in graphene's conductivity and a shift of the Dirac point. Our results are valuable for understanding the possible defects generated in graphene by electron beam exposure and in high-radiation environment in general.