Determination of band offsets and subband levels for a GaInP/AlGaInP quantum well by photoreflectance using a InGaP laser diode

Determination of band offsets and subband levels for a GaInP/AlGaInP quantum well by photoreflectance using a InGaP laser diode

The band offsets and subband levels in a double quantum well layer for a 660nm‐Ga0.4In0.6P/(Al0.5Ga0.5)0.5In0.5P quantum well laser are determined by photoreflectance using a 410 nm InGaN laser with current modulation at room temperature. The subband levels are analyzed by numerical calculation of t...

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Veröffentlicht in:Physica status solidi. C 2009-06, Vol.6 (6), p.1517-1519
Hauptverfasser: Susaki, Wataru, Kakuda, Shinichi, Igawa, Takahiro, Inada, Takeshi, Tomioka, Akihiro
Format: Artikel
Sprache:eng
Schlagworte:
71.20.Nr
73.63.Hs
78.66.Fd
78.67.De
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Zusammenfassung:The band offsets and subband levels in a double quantum well layer for a 660nm‐Ga0.4In0.6P/(Al0.5Ga0.5)0.5In0.5P quantum well laser are determined by photoreflectance using a 410 nm InGaN laser with current modulation at room temperature. The subband levels are analyzed by numerical calculation of the Schrödinger equation for the layer structure by varying the conduction band offset and compared with the measured photoreflectance spectra. The conduction band offset ratio is determined to be 0.5+0.03. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
DOI:10.1002/pssc.200881540