Complementary Metal Oxide Semiconductors Microelectromechanical Systems Integration

A review of the integration of the complementry metal oxide semiconductors (CMOS) circuit with the microelectromechanical systems (MEMS) structures for sensing and RF applications has been presented. Specifically, the integrated mechanical sensors, chemical gas sensors, and biochemical sensors have...

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Veröffentlicht in:Defense science journal 2009-11, Vol.59 (6), p.557-567
Hauptverfasser: Saha, H., Chaudhuri, C.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
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Zusammenfassung:A review of the integration of the complementry metal oxide semiconductors (CMOS) circuit with the microelectromechanical systems (MEMS) structures for sensing and RF applications has been presented. Specifically, the integrated mechanical sensors, chemical gas sensors, and biochemical sensors have been discussed. Application of MEMS as switches, varactors, and inductors and their integration in RF circuits has also been highlighted. The fabrication and design challenges for the CMOS-MEMS integration have been described. A new design methodology for integration of thermal effects in an integrated pressure sensor has been proposed.
ISSN:0011-748X
0976-464X
DOI:10.14429/dsj.59.1560