Reliability of SnAgCu Alloys for CMOS Image Sensor QFN Package under Thermal Cycling Loading

A three-dimensional finite element model of CMOS image sensor QFN packaging using ANSYS codes is developed to investigate the solder joint reliability under thermal cycle test. The predicted thermal-induced displacements were found to be very good agreement with the Moiré interferometer experimental in-plane deformations. The developed finite element model is then applied to predict fatigue life of Sn4.0Ag0.5Cu, Sn3.5Ag0.5Cu and Sn3.9Ag0.6Cu alloys based on JEDEC standard JESD22-A104. In order to save computational time and produce satisfactory results in the region of interest, an independent more finely meshed so-called submodel scheme based on cut-boundary displacement method is generated. The mesh density for different area ratio of refinery/coarse model was verified and the results were found to be good agreement with previous researches. The modified Coffin-Manson equation and strain energy density based equation are applied to evaluate the reliability of SnAgCu alloys. A series of comprehensive parametric studies were conducted in this paper.