Cu2ZnSnSe4 thin film solar cells produced by selenisation of magnetron sputtered precursors

Polycrystalline thin films of Cu2ZnSnSe4 (CZTSe) were produced by selenisation of Cu(Zn,Sn) magnetron sputtered metallic precursors for solar cell applications. The p‐type CZTSe absorber films were found to crystallize in the stannite structure (a = 5·684 Å and c = 11·353 Å) with an electronic bandgap of 0·9 eV. Solar cells with the indium tin oxide structure (ITO)/ZnO/CdS/CZTSe/Mo were fabricated with device efficiencies up to 3·2% measured under standard AM1·5 illumination. Copyright © 2009 John Wiley & Sons, Ltd. Polycrystalline thin films of Cu2ZnSnSe4 (CZTSe) were produced by selenisation of Cu(Zn,Sn) magnetron sputtered metallic precursors for solar cell applications. The p‐type CZTSe absorber films were found to crystallise in the stannite structure (a = 5.684 Å and c = 11.353 Å) with an electronic bandgap of 0.9 eV. Solar cells with the structure ITO/ZnO/CdS/CZTSe/Mo were fabricated with device efficiencies up to 3.2% measured under standard AM1.5 illumination.