Noncontact Conductivity Measurement of Nanostructured Semiconductors Using THz-TDS

Noncontact Conductivity Measurement of Nanostructured Semiconductors Using THz-TDS

Four-point probe measurement has been commonly used to measure the electrical properties of nanostructured semiconductors. With this method, however, mechanical contacts are required and in some semiconductors, such as GaAs, it is difficult to characterize their electrical properties due to the Scho...

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Veröffentlicht in:AIP conference proceedings 2008-10, Vol.1119, p.223b-223b
Hauptverfasser: Kim, Hyeongmun, Maeng, Inhee, Cho, Nam Ki, Song, Jin Dong, Choi, Won Jun, Son, Joo-Hiuk
Format: Artikel
Sprache:eng
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Zusammenfassung:Four-point probe measurement has been commonly used to measure the electrical properties of nanostructured semiconductors. With this method, however, mechanical contacts are required and in some semiconductors, such as GaAs, it is difficult to characterize their electrical properties due to the Schottky barrier at the interface between metal and semiconductor.
ISSN:0094-243X