Ultralow-Loss SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

Ultralow-Loss SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

We have applied the floating junction (FJ) structure, which has been confirmed to be effective in reducing the on-resistance of Si power devices, to SiC FJ Schottky barrier diodes (SiC Super-SBDs). Optimization of the device parameters, which are derived by making improvements in the device simulato...

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Veröffentlicht in:IEEE transactions on electron devices 2008-08, Vol.55 (8), p.1954-1960
Hauptverfasser: Nishio, Johji, Ota, Chiharu, Hatakeyama, Tetsuo, Shinohe, Takashi, Kojima, Kazutoshi, Nishizawa, Shin-Ichi, Ohashi, Hiromichi
Format: Artikel
Sprache:eng
Schlagworte:
4H-SiC
Aluminum
Barriers
Devices
Diodes
Electric potential
Etching
Figure-of-merit (FOM)
Floating structures
Hydrogen
Impurities
Optimization
Schottky barrier diode (SBD)
Schottky diodes
Silicon carbide
Substrates
Voltage
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Zusammenfassung:We have applied the floating junction (FJ) structure, which has been confirmed to be effective in reducing the on-resistance of Si power devices, to SiC FJ Schottky barrier diodes (SiC Super-SBDs). Optimization of the device parameters, which are derived by making improvements in the device simulator, and development of the fabrication process have enabled realization of Super-SBDs with a breakdown voltage of 2700 V and a specific on-resistance of 2.57 mOmega ldr cm 2 . These values correspond to the world record of 11.3 GW/cm 2 for Baliga's figure-of-merit (BFOM = 4V bd 2 /R on-sp ).
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2008.926666