Ohmic Contact To Amorphous Carbon Thin Films

Amorphous carbon (a-C) thin films have been deposited on silicon substrates at different deposition temperatures ranging from 700 deg C-800 deg C. The objective of this work is to investigate several electrical contacts on a-C thin films and to find the suitable method to fabricate ohmic contact on a-C thin films that prepared from a natural product, camphor (C10H16O). The a-C thin films were prepared with a simple thermal CVD method. In this study, Aurum (Au) and Platinum (Pt) were selected as the metal contact to a-C thin films. I-V characteristics measurement was carried out to study the contact between metal and a-C thin films. It was found that increasing deposition temperature also contributes to the variation I-V characteristics of a-C thin films.