Formation of DLC films by three-dimensional ion implantation under high vacuum

Using a modified loop antenna, RF plasmas are formed under high vacuum without collisions between neutral atoms and a test piece or a target (Si) that is mounted in the plasma. By applying a negative high voltage to the target, carbon ions are implanted into the target by the three‐dimensional ion i...

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Veröffentlicht in:Electrical engineering in Japan 2007-02, Vol.158 (3), p.1-11
Hauptverfasser: Tamba, Moritake, Saitou, Takahiro, Ikegami, Yuji, Suzuki, Yoshiaki, Kobayashi, Tomohiro, Tokuchi, Akira, Katayama, Takeshi
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Sprache:eng
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Zusammenfassung:Using a modified loop antenna, RF plasmas are formed under high vacuum without collisions between neutral atoms and a test piece or a target (Si) that is mounted in the plasma. By applying a negative high voltage to the target, carbon ions are implanted into the target by the three‐dimensional ion implantation method. Films thus formed have been identified as DLC (diamond‐like carbon) by Raman spectra, X‐ray diffractometry, and Rutherford back scattering. In the case of a target of WC with 10% Co, it has been found that the sticking force of the film is 60 N and the friction coefficient 0.13. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 158(3): 1–11, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/eej.20444
ISSN:0424-7760
1520-6416
DOI:10.1002/eej.20444