Electric-Field-Induced Gap States in Pentacene

Electrical measurements of a pentacene (Pn) thin‐film transistor reveal that oxygen exposure under certain bias voltages results in the formation of Pn gap states, whose influence on transistor properties is relevant to the development of organic electronics. A model explaining the origin of these states is presented, and the current/voltage characteristics of the transistor are simulated using results from pseudopotential density functional theory.