Fe/ZnSe/Fe junctions: Interplay between interface structure and tunneling magnetoresistance

We investigate the electronic structure of Fe/ZnSe/Fe magnetic tunnel junctions for which interdiffusion and reconstruction at the interfaces are considered. Taking into account the ab initio potential profile throughout the different layers of the structure, we discuss about its implications on the...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2009-10, Vol.404 (18), p.2841-2844
Hauptverfasser: Helman, C., Ferrari, V., Milano, J., Llois, A.M.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We investigate the electronic structure of Fe/ZnSe/Fe magnetic tunnel junctions for which interdiffusion and reconstruction at the interfaces are considered. Taking into account the ab initio potential profile throughout the different layers of the structure, we discuss about its implications on the tunnel conductance. Our results show that interface reconstruction drives changes in the electronic structure which, in turn, produce an increase of the kinetic energy of the conduction electrons, independently of their spin orientation. We suggest that this reconstruction underlies the low tunnel magnetoresistance (TMR), as it is observed in transport measurements when compared with the theoretical value estimated for sharp interfaces.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2009.06.101