Virtual material testing for stamping simulations based on polycrystal plasticity

In the modern practice of stamping simulation of complex industrial parts the prediction of springback still lacks accuracy. In commercial software packages various empirical constitutive laws for stamping are available. Limited to simple empirical models for material anisotropy they do not take int...

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Veröffentlicht in:Computational materials science 2009-08, Vol.46 (2), p.383-392
Hauptverfasser: Kraska, M., Doig, M., Tikhomirov, D., Raabe, D., Roters, F.
Format: Artikel
Sprache:eng
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Zusammenfassung:In the modern practice of stamping simulation of complex industrial parts the prediction of springback still lacks accuracy. In commercial software packages various empirical constitutive laws for stamping are available. Limited to simple empirical models for material anisotropy they do not take into account in a full manner the effects of microstructure and its evolution during the deformation process. The crystal plasticity finite element method bridges the gap between the polycrystalline texture and macroscopic mechanical properties that opens the way for more profound consideration of metal anisotropy in the stamping process simulation. In this paper the application of crystal plasticity FEM within the concept of virtual material testing with a representative volume element (RVE) is demonstrated. Using virtual tests it becomes possible, for example, to determine the actual shape of the yield locus and Lankford parameters and to use this information to calibrate empirical constitutive models. Along with standard uniaxial tensile tests other strain paths can be investigated like biaxial tensile, compressive or shear tests. The application of the crystal plasticity FEM for the virtual testing is demonstrated for DC04 and H320LA steel grades. The parameters of the Vegter yield locus are calibrated and the use case demonstration is completed by simulation of a typical industrial part in PAMSTAMP 2G.
ISSN:0927-0256
1879-0801
DOI:10.1016/j.commatsci.2009.03.025