Thin films of In(2)O(3) by atomic layer deposition using In(acac)(3)

Thin films of indium oxide have been deposited using the atomic layer deposition (ALD) technique using In(acac)(3) (acac = acetylacetonate, pentane-2,4-dione) and either H(2)O or O(3) as precursors. Successful growth using In(acac)(3) is contradictory to what has been reported previously in the literature [J.W. Elam, A.B.F. Martinson, M.J. Pellin, J.T. Hupp, Chem. Mater. 18 (2006) 3571.]. Investigation of the dependence of temperature on the deposition shows windows where the growth rates are relatively unaffected by temperature in the ranges 165-200 (o)C for In(acac)(3) and H(2)O, 165-225 (o)C for In(acac)(3) and O(3). The growth rates obtained are of the order 20 pm/cycle for In(acac)(3) and H(2)O, 12 pm/cycle for In(acac)(3).