Sol–gel derived N-doped ZnO thin films

N-doped ZnO (NZO) thin films have been prepared by a sol–gel method and their electrical and optical properties have been investigated. The prepared NZO films were p-type, and had excellent electrical properties. They had an optical transparency above 85% in the visible range. The UV absorption edge...

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Veröffentlicht in:Materials letters 2009-10, Vol.63 (26), p.2246-2248
Hauptverfasser: Nian, Hongen, Hahn, Sung Hong, Koo, Kee-Kahb, Shin, Eun Woo, Kim, Eui Jung
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Sprache:eng
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Zusammenfassung:N-doped ZnO (NZO) thin films have been prepared by a sol–gel method and their electrical and optical properties have been investigated. The prepared NZO films were p-type, and had excellent electrical properties. They had an optical transparency above 85% in the visible range. The UV absorption edge was red-shifted with increasing N-doping concentration. Two emission bands were observed in the photoluminescence (PL) spectra, with one band located in the UV range and the other band consisting of green luminescence. Both UV and green emissions were enhanced with increasing N-doping concentration.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2009.07.038