Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications

Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications

Nitride storage non-volatile memories with hafnium silicate (HfSiO(x)) blocking dielectric and titanium nitride (TiN) metal gate aimed at low power embedded applications beyond the 45 nm node, have been fabricated and investigated. In addition to presenting the typical figures of merit of flash memo...

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Veröffentlicht in:Microelectronic engineering 2009-10, Vol.86 (10), p.1999-2004
Hauptverfasser: Golubovic, Dusan S, Van Duuren, Michiel J, Akil, Nader, Arreghini, Antonio, Driussi, Francesco
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container_end_page 2004
container_issue 10
container_start_page 1999
container_title Microelectronic engineering
container_volume 86
creator Golubovic, Dusan S
Van Duuren, Michiel J
Akil, Nader
Arreghini, Antonio
Driussi, Francesco
description Nitride storage non-volatile memories with hafnium silicate (HfSiO(x)) blocking dielectric and titanium nitride (TiN) metal gate aimed at low power embedded applications beyond the 45 nm node, have been fabricated and investigated. In addition to presenting the typical figures of merit of flash memories, the scalability of the devices has been assessed. We have also investigated the physical origin of the observed memory features.
doi_str_mv 10.1016/j.mee.2009.01.028
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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_34779970</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>34779970</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_347799703</originalsourceid><addsrcrecordid>eNqNjbFOw0AQRK8AKQHyAXRbIShsznGE4xIhUCooSB9dfGuzYX1rbi8YfoGvxgUfQDWa0ZsZYy4Lmxe2uLs95D1ivrS2zm2R2-X6xMynvMrqsqhm5kz1YCe_suu5-bkPjr-VFKSFQCmSR9Ak0XUIQUL2KewSMUKPvURChZHSG2zaV3q5_rqBPUvzTqEDT8jYTAMNuOBhS89TJTmGziWEViKwjDDIiBGw36P36MENA1MzHUjQC3PaOlZc_Om5uXp63D5ssiHKxxE17XrSBpldQDnqrlxVVV1Xtvw3-Atywlzm</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>34779970</pqid></control><display><type>article</type><title>Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications</title><source>Elsevier ScienceDirect Journals</source><creator>Golubovic, Dusan S ; Van Duuren, Michiel J ; Akil, Nader ; Arreghini, Antonio ; Driussi, Francesco</creator><creatorcontrib>Golubovic, Dusan S ; Van Duuren, Michiel J ; Akil, Nader ; Arreghini, Antonio ; Driussi, Francesco</creatorcontrib><description>Nitride storage non-volatile memories with hafnium silicate (HfSiO(x)) blocking dielectric and titanium nitride (TiN) metal gate aimed at low power embedded applications beyond the 45 nm node, have been fabricated and investigated. In addition to presenting the typical figures of merit of flash memories, the scalability of the devices has been assessed. We have also investigated the physical origin of the observed memory features.</description><identifier>ISSN: 0167-9317</identifier><identifier>DOI: 10.1016/j.mee.2009.01.028</identifier><language>eng</language><ispartof>Microelectronic engineering, 2009-10, Vol.86 (10), p.1999-2004</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Golubovic, Dusan S</creatorcontrib><creatorcontrib>Van Duuren, Michiel J</creatorcontrib><creatorcontrib>Akil, Nader</creatorcontrib><creatorcontrib>Arreghini, Antonio</creatorcontrib><creatorcontrib>Driussi, Francesco</creatorcontrib><title>Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications</title><title>Microelectronic engineering</title><description>Nitride storage non-volatile memories with hafnium silicate (HfSiO(x)) blocking dielectric and titanium nitride (TiN) metal gate aimed at low power embedded applications beyond the 45 nm node, have been fabricated and investigated. In addition to presenting the typical figures of merit of flash memories, the scalability of the devices has been assessed. We have also investigated the physical origin of the observed memory features.</description><issn>0167-9317</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqNjbFOw0AQRK8AKQHyAXRbIShsznGE4xIhUCooSB9dfGuzYX1rbi8YfoGvxgUfQDWa0ZsZYy4Lmxe2uLs95D1ivrS2zm2R2-X6xMynvMrqsqhm5kz1YCe_suu5-bkPjr-VFKSFQCmSR9Ak0XUIQUL2KewSMUKPvURChZHSG2zaV3q5_rqBPUvzTqEDT8jYTAMNuOBhS89TJTmGziWEViKwjDDIiBGw36P36MENA1MzHUjQC3PaOlZc_Om5uXp63D5ssiHKxxE17XrSBpldQDnqrlxVVV1Xtvw3-Atywlzm</recordid><startdate>20091001</startdate><enddate>20091001</enddate><creator>Golubovic, Dusan S</creator><creator>Van Duuren, Michiel J</creator><creator>Akil, Nader</creator><creator>Arreghini, Antonio</creator><creator>Driussi, Francesco</creator><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20091001</creationdate><title>Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications</title><author>Golubovic, Dusan S ; Van Duuren, Michiel J ; Akil, Nader ; Arreghini, Antonio ; Driussi, Francesco</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_347799703</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Golubovic, Dusan S</creatorcontrib><creatorcontrib>Van Duuren, Michiel J</creatorcontrib><creatorcontrib>Akil, Nader</creatorcontrib><creatorcontrib>Arreghini, Antonio</creatorcontrib><creatorcontrib>Driussi, Francesco</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Golubovic, Dusan S</au><au>Van Duuren, Michiel J</au><au>Akil, Nader</au><au>Arreghini, Antonio</au><au>Driussi, Francesco</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications</atitle><jtitle>Microelectronic engineering</jtitle><date>2009-10-01</date><risdate>2009</risdate><volume>86</volume><issue>10</issue><spage>1999</spage><epage>2004</epage><pages>1999-2004</pages><issn>0167-9317</issn><abstract>Nitride storage non-volatile memories with hafnium silicate (HfSiO(x)) blocking dielectric and titanium nitride (TiN) metal gate aimed at low power embedded applications beyond the 45 nm node, have been fabricated and investigated. In addition to presenting the typical figures of merit of flash memories, the scalability of the devices has been assessed. We have also investigated the physical origin of the observed memory features.</abstract><doi>10.1016/j.mee.2009.01.028</doi></addata></record>
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title Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T05%3A42%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Analysis%20of%20nitride%20storage%20non-volatile%20memories%20with%20HfSiO(x)%20blocking%20dielectric%20and%20TiN%20metal%20gate%20for%20low%20power%20embedded%20applications&rft.jtitle=Microelectronic%20engineering&rft.au=Golubovic,%20Dusan%20S&rft.date=2009-10-01&rft.volume=86&rft.issue=10&rft.spage=1999&rft.epage=2004&rft.pages=1999-2004&rft.issn=0167-9317&rft_id=info:doi/10.1016/j.mee.2009.01.028&rft_dat=%3Cproquest%3E34779970%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=34779970&rft_id=info:pmid/&rfr_iscdi=true