Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications

Analysis of nitride storage non-volatile memories with HfSiO(x) blocking dielectric and TiN metal gate for low power embedded applications

Nitride storage non-volatile memories with hafnium silicate (HfSiO(x)) blocking dielectric and titanium nitride (TiN) metal gate aimed at low power embedded applications beyond the 45 nm node, have been fabricated and investigated. In addition to presenting the typical figures of merit of flash memo...

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Veröffentlicht in:Microelectronic engineering 2009-10, Vol.86 (10), p.1999-2004
Hauptverfasser: Golubovic, Dusan S, Van Duuren, Michiel J, Akil, Nader, Arreghini, Antonio, Driussi, Francesco
Format: Artikel
Sprache:eng
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Zusammenfassung:Nitride storage non-volatile memories with hafnium silicate (HfSiO(x)) blocking dielectric and titanium nitride (TiN) metal gate aimed at low power embedded applications beyond the 45 nm node, have been fabricated and investigated. In addition to presenting the typical figures of merit of flash memories, the scalability of the devices has been assessed. We have also investigated the physical origin of the observed memory features.
ISSN:0167-9317
DOI:10.1016/j.mee.2009.01.028