Impact of implantation on the properties of N(2)O-nitrided oxides of p(+)- and n(+)-gate MOS devices

Impact of implantation on the properties of N(2)O-nitrided oxides of p(+)- and n(+)-gate MOS devices

The impact of the gate implantation on properties of N(2)O-nitrided thermal oxides MOS dielectric layers were evaluated in this study via current-voltage, j-ramp and current-temperature techniques. The data obtained show that implantation with boron of poly-Si gates can result in generation of borde...

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Veröffentlicht in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1564-1567
Hauptverfasser: Naumova, O V, Fomin, B I, Sakharova, N V, Ilnitsky, M A, Popov, V P
Format: Artikel
Sprache:eng
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Zusammenfassung:The impact of the gate implantation on properties of N(2)O-nitrided thermal oxides MOS dielectric layers were evaluated in this study via current-voltage, j-ramp and current-temperature techniques. The data obtained show that implantation with boron of poly-Si gates can result in generation of border traps in oxides. The energy position of traps generated in the oxides after Fowler-Nordheim voltage stress and after hard breakdown treatments were evaluated.
ISSN:0168-583X
DOI:10.1016/j.nimb.2009.01.092