LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application

LPE Growth of Low Doped n-Type 4H-SiC Layer on On-Axis Substrate for Power Device Application

LPE (liquid phase epitaxy) growth of low nitrogen unintentionally doped SiC epitaxial layer on on-axis 4H-SiC substrate using nitrogen getter Si based solution was investigated to realize basal plane dislocation (BPD) free epitaxial layer. A significant reduction in BPD was demonstrated.

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Veröffentlicht in:Materials science forum 2009-01, Vol.615-617, p.141-144
Hauptverfasser: Shimosaki, S., Kusunoki, Kazuhiko, Kamei, Kazuhito, Hattori, Ryo, Yashiro, Nobuyoshi
Format: Artikel
Sprache:eng
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Zusammenfassung:LPE (liquid phase epitaxy) growth of low nitrogen unintentionally doped SiC epitaxial layer on on-axis 4H-SiC substrate using nitrogen getter Si based solution was investigated to realize basal plane dislocation (BPD) free epitaxial layer. A significant reduction in BPD was demonstrated.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.615-617.141