All solution-processed high-resolution bottom-contact transparent metal-oxide thin film transistors
We report all solution-processed high-resolution bottom-contact indium-gallium-zinc-oxide (IGZO) thin film transistors (TFTs) using a simple surface patterning and dip-casting process. High-resolution nanoparticulate Ag source/drain electrodes and a sol-gel processed IGZO semiconductor were deposite...
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| Veröffentlicht in: | Journal of physics. D, Applied physics Applied physics, 2009-06, Vol.42 (12), p.125102-125102p6 |
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| container_end_page | 125102p6 |
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| container_issue | 12 |
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| container_title | Journal of physics. D, Applied physics |
| container_volume | 42 |
| creator | Park, Sung Kyu Kim, Yong-Hoon Han, Jeong-In |
| description | We report all solution-processed high-resolution bottom-contact indium-gallium-zinc-oxide (IGZO) thin film transistors (TFTs) using a simple surface patterning and dip-casting process. High-resolution nanoparticulate Ag source/drain electrodes and a sol-gel processed IGZO semiconductor were deposited by a simple dip-casting along with a photoresist-free, non-relief-pattern lithographic process. The deposited Ag and IGZO solution can be steered into the desired hydrophilic areas by a low surface energy self-assembled monolayer, resulting in source/drain electrodes and semiconducting layer, respectively. The all solution-processed bottom-contact IGZO TFTs including a channel length of 10 mum typically showed a mobility range 0.05-0.2 cm(2) V(-1) s(-1) with an on/off ratio of more than 10(6). |
| doi_str_mv | 10.1088/0022-3727/42/12/125102 |
| format | Article |
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High-resolution nanoparticulate Ag source/drain electrodes and a sol-gel processed IGZO semiconductor were deposited by a simple dip-casting along with a photoresist-free, non-relief-pattern lithographic process. The deposited Ag and IGZO solution can be steered into the desired hydrophilic areas by a low surface energy self-assembled monolayer, resulting in source/drain electrodes and semiconducting layer, respectively. The all solution-processed bottom-contact IGZO TFTs including a channel length of 10 mum typically showed a mobility range 0.05-0.2 cm(2) V(-1) s(-1) with an on/off ratio of more than 10(6).</description><identifier>ISSN: 0022-3727</identifier><identifier>EISSN: 1361-6463</identifier><identifier>DOI: 10.1088/0022-3727/42/12/125102</identifier><identifier>CODEN: JPAPBE</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Microelectronic fabrication (materials and surfaces technology) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>Journal of physics. 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D, Applied physics</title><description>We report all solution-processed high-resolution bottom-contact indium-gallium-zinc-oxide (IGZO) thin film transistors (TFTs) using a simple surface patterning and dip-casting process. High-resolution nanoparticulate Ag source/drain electrodes and a sol-gel processed IGZO semiconductor were deposited by a simple dip-casting along with a photoresist-free, non-relief-pattern lithographic process. The deposited Ag and IGZO solution can be steered into the desired hydrophilic areas by a low surface energy self-assembled monolayer, resulting in source/drain electrodes and semiconducting layer, respectively. The all solution-processed bottom-contact IGZO TFTs including a channel length of 10 mum typically showed a mobility range 0.05-0.2 cm(2) V(-1) s(-1) with an on/off ratio of more than 10(6).</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, Sung Kyu</creatorcontrib><creatorcontrib>Kim, Yong-Hoon</creatorcontrib><creatorcontrib>Han, Jeong-In</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of physics. D, Applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, Sung Kyu</au><au>Kim, Yong-Hoon</au><au>Han, Jeong-In</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>All solution-processed high-resolution bottom-contact transparent metal-oxide thin film transistors</atitle><jtitle>Journal of physics. D, Applied physics</jtitle><date>2009-06-21</date><risdate>2009</risdate><volume>42</volume><issue>12</issue><spage>125102</spage><epage>125102p6</epage><pages>125102-125102p6</pages><issn>0022-3727</issn><eissn>1361-6463</eissn><coden>JPAPBE</coden><abstract>We report all solution-processed high-resolution bottom-contact indium-gallium-zinc-oxide (IGZO) thin film transistors (TFTs) using a simple surface patterning and dip-casting process. High-resolution nanoparticulate Ag source/drain electrodes and a sol-gel processed IGZO semiconductor were deposited by a simple dip-casting along with a photoresist-free, non-relief-pattern lithographic process. The deposited Ag and IGZO solution can be steered into the desired hydrophilic areas by a low surface energy self-assembled monolayer, resulting in source/drain electrodes and semiconducting layer, respectively. The all solution-processed bottom-contact IGZO TFTs including a channel length of 10 mum typically showed a mobility range 0.05-0.2 cm(2) V(-1) s(-1) with an on/off ratio of more than 10(6).</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/0022-3727/42/12/125102</doi></addata></record> |
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| ispartof | Journal of physics. D, Applied physics, 2009-06, Vol.42 (12), p.125102-125102p6 |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | All solution-processed high-resolution bottom-contact transparent metal-oxide thin film transistors |
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