Ohmic contacts on n-type layers formed in GaN/AlGaN/GaN by dual-energy Si ion implantation

Ohmic contacts on n-type layers formed in GaN/AlGaN/GaN by dual-energy Si ion implantation

Electrical properties of Si-implanted n-type GaN/AlGaN/GaN layers and contact resistances of ohmic electrodes (TiAl) formed on these layers have been examined. Experimental results have clearly shown that ohmic electrodes with a low specific-contact resistance of 1.4×10−7Ωcm2 can be fabricated on th...

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Veröffentlicht in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1571-1574
Hauptverfasser: Shiino, Tomohisa, Saitoh, Tomohiro, Nakamura, Tohru, Inada, Taroh
Format: Artikel
Sprache:eng
Schlagworte:
GaN/AlGaN/GaN
HEMT
Ion implantation
Ohmic contacts
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container_end_page 1574
container_issue 8-9
container_start_page 1571
container_title Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
container_volume 267
creator Shiino, Tomohisa
Saitoh, Tomohiro
Nakamura, Tohru
Inada, Taroh
description Electrical properties of Si-implanted n-type GaN/AlGaN/GaN layers and contact resistances of ohmic electrodes (TiAl) formed on these layers have been examined. Experimental results have clearly shown that ohmic electrodes with a low specific-contact resistance of 1.4×10−7Ωcm2 can be fabricated on the n-type layer having a low sheet resistance of 145Ω/sq, which has been formed by the dual-energy Si ion implantation (80keV:1.01×1015/cm2+30keV:1.6×1014/cm2) and subsequent annealing at 1200°C for 2min using a Si3N4 layer as an encapsulant.
doi_str_mv 10.1016/j.nimb.2009.01.133
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subjects GaN/AlGaN/GaN
HEMT
Ion implantation
Ohmic contacts
title Ohmic contacts on n-type layers formed in GaN/AlGaN/GaN by dual-energy Si ion implantation
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