Ohmic contacts on n-type layers formed in GaN/AlGaN/GaN by dual-energy Si ion implantation

Ohmic contacts on n-type layers formed in GaN/AlGaN/GaN by dual-energy Si ion implantation

Electrical properties of Si-implanted n-type GaN/AlGaN/GaN layers and contact resistances of ohmic electrodes (TiAl) formed on these layers have been examined. Experimental results have clearly shown that ohmic electrodes with a low specific-contact resistance of 1.4×10−7Ωcm2 can be fabricated on th...

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Veröffentlicht in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1571-1574
Hauptverfasser: Shiino, Tomohisa, Saitoh, Tomohiro, Nakamura, Tohru, Inada, Taroh
Format: Artikel
Sprache:eng
Schlagworte:
GaN/AlGaN/GaN
HEMT
Ion implantation
Ohmic contacts
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Zusammenfassung:Electrical properties of Si-implanted n-type GaN/AlGaN/GaN layers and contact resistances of ohmic electrodes (TiAl) formed on these layers have been examined. Experimental results have clearly shown that ohmic electrodes with a low specific-contact resistance of 1.4×10−7Ωcm2 can be fabricated on the n-type layer having a low sheet resistance of 145Ω/sq, which has been formed by the dual-energy Si ion implantation (80keV:1.01×1015/cm2+30keV:1.6×1014/cm2) and subsequent annealing at 1200°C for 2min using a Si3N4 layer as an encapsulant.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2009.01.133