Direct low-energy electron beam nanolithography

Direct low-energy electron beam nanolithography

We describe here an alternative approach to direct low-energy electron beam nanolithography process with no conventional deposition of any resist or self-assembled monolayer. The method is based on direct formation of ultrathin dielectric layer on electron irradiated surface, without generation of s...

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Veröffentlicht in:Surface science 2009-08, Vol.603 (16), p.2430-2433
Hauptverfasser: Aronov, Daniel, Rosenman, Gil
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Electron beam
Exact sciences and technology
Nanolithography
Physics
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Beschreibung
Zusammenfassung:We describe here an alternative approach to direct low-energy electron beam nanolithography process with no conventional deposition of any resist or self-assembled monolayer. The method is based on direct formation of ultrathin dielectric layer on electron irradiated surface, without generation of structural defects. High-quality electron-induced patterns with lateral resolutions of about 10 nm are demonstrated on SiO 2 surface.
ISSN:0039-6028
1879-2758
DOI:10.1016/j.susc.2009.05.027