Crystallization characteristics of nitrogen-doped Sb2Te3 films for PRAM application

The Sb2Te3 film is an attractive candidate for phase change random access memory due to its rapid crystallisation speed. To improve the phase stability and easy reamorphisation, nitrogen-doped Sb2Te3 films are proposed. The characteristics of nitrogen-doped Sb2Te3 films were investigated using SIMS,...

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Veröffentlicht in:	Ceramics international 2008-05, Vol.34 (4), p.1043-1046
Hauptverfasser:	Kim, Myoung Sub, Cho, Sung Hyuk, Hong, Suk Kyoung, Roh, Jae Sung, Choi, Doo Jin
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Materials Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Zusammenfassung:	The Sb2Te3 film is an attractive candidate for phase change random access memory due to its rapid crystallisation speed. To improve the phase stability and easy reamorphisation, nitrogen-doped Sb2Te3 films are proposed. The characteristics of nitrogen-doped Sb2Te3 films were investigated using SIMS, 4-point probe technique, XRD and static test. The nitrogen doping caused an increase of crystallisation temperature and sheet resistance of the Sb2Te3 films. The crystallisation speed of nitrogen-doped Sb2Te3 films was superior to Ge2Sb2Te5 films. 14 refs.
ISSN:	0272-8842 1873-3956
DOI:	10.1016/j.ceramint.2007.09.078