Carbon-Nanotube-Enabled Vertical Field Effect and Light-Emitting Transistors
In contrast to typical metals, carbon nanotubes are shown to form a unique Schottky barrier contact with semiconductors wherein a gate field can modulate not only the band bending in the semiconductor but also the height of the barrier. These phenomena are exploited to enable two new device architec...
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| Veröffentlicht in: | Advanced materials (Weinheim) 2008-10, Vol.20 (19), p.3605-3609 |
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| container_issue | 19 |
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| container_title | Advanced materials (Weinheim) |
| container_volume | 20 |
| creator | Liu, Bo McCarthy, Mitchell A. Yoon, Youngki Kim, Do Young Wu, Zhuangchun So, Franky Holloway, Paul H. Reynolds, John R. Guo, Jing Rinzler, Andrew G. |
| description | In contrast to typical metals, carbon nanotubes are shown to form a unique Schottky barrier contact with semiconductors wherein a gate field can modulate not only the band bending in the semiconductor but also the height of the barrier. These phenomena are exploited to enable two new device architectures: a vertical field‐effect transistor (figure) and a vertical light‐emitting transistor. |
| doi_str_mv | 10.1002/adma.200800601 |
| format | Article |
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| language | eng |
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| source | Access via Wiley Online Library |
| subjects | carbon nanotubes field effect transistors light emitting transistors schottky barrier devices thin-film transistors |
| title | Carbon-Nanotube-Enabled Vertical Field Effect and Light-Emitting Transistors |
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