Carbon-Nanotube-Enabled Vertical Field Effect and Light-Emitting Transistors

In contrast to typical metals, carbon nanotubes are shown to form a unique Schottky barrier contact with semiconductors wherein a gate field can modulate not only the band bending in the semiconductor but also the height of the barrier. These phenomena are exploited to enable two new device architectures: a vertical field‐effect transistor (figure) and a vertical light‐emitting transistor.