Axial macrosegregation in Ga-doped germanium grown by the vertical gradient freeze technique with a rotating magnetic field

The impact of a rotating magnetic field (RMF) on the axial segregation in Vertical Gradient Freeze (VGF) grown, Ga doped germanium is investigated. Growth experiments were performed using the VGF‐RMF as well as the conventional VGF technique. Carrier concentration profiles characterising the Ga segr...

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Veröffentlicht in:Crystal research and technology (1979) 2004-03, Vol.39 (3), p.195-199
Hauptverfasser: Bellmann, M., Pätzold, O., Wunderwald, U., Cröll, A.
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Sprache:eng
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Zusammenfassung:The impact of a rotating magnetic field (RMF) on the axial segregation in Vertical Gradient Freeze (VGF) grown, Ga doped germanium is investigated. Growth experiments were performed using the VGF‐RMF as well as the conventional VGF technique. Carrier concentration profiles characterising the Ga segregation were measured by the Spreading Resistance method and calibrated using Hall values of carrier concentration and mobility. The Ga concentration rises more gradually under RMF action, i.e., the dopant segregation is significantly reduced by the rotating field. This effect is attributed to a better mixing of the melt. Numerical results on the flow velocity confirm this explanation. The RMF induced flow is much more intense than the natural buoyant convection due to the radial temperature gradient and leads to a pronounced decrease of the effective partition coefficient keff. In the early stages of growth a keff value close to k0 was obtained, i.e., the gallium was almost homogeneously distributed within the melt. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:0232-1300
1521-4079
DOI:10.1002/crat.200310170