Intermediate band mobility in heavily titanium-doped silicon layers

The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10 21 cm −3, are measured in the 90–370 K range. Below 240 K, an unconventional behavior is observed that is well explained on the basis of th...

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Veröffentlicht in:	Solar energy materials and solar cells 2009-09, Vol.93 (9), p.1668-1673
Hauptverfasser:	Gonzalez-Díaz, G., Olea, J., Mártil, I., Pastor, D., Martí, A., Antolín, E., Luque, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Energy Exact sciences and technology Intermediate band Mobility Natural energy Novel concepts Photovoltaic conversion Silicon Solar cells Solar cells. Photoelectrochemical cells Solar energy Titanium
Online-Zugang:	Volltext
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