Intermediate band mobility in heavily titanium-doped silicon layers

Intermediate band mobility in heavily titanium-doped silicon layers

The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10 21 cm −3, are measured in the 90–370 K range. Below 240 K, an unconventional behavior is observed that is well explained on the basis of th...

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Veröffentlicht in:Solar energy materials and solar cells 2009-09, Vol.93 (9), p.1668-1673
Hauptverfasser: Gonzalez-Díaz, G., Olea, J., Mártil, I., Pastor, D., Martí, A., Antolín, E., Luque, A
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Energy
Exact sciences and technology
Intermediate band
Mobility
Natural energy
Novel concepts
Photovoltaic conversion
Silicon
Solar cells
Solar cells. Photoelectrochemical cells
Solar energy
Titanium
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Beschreibung
Zusammenfassung:The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10 21 cm −3, are measured in the 90–370 K range. Below 240 K, an unconventional behavior is observed that is well explained on the basis of the appearance of an intermediate band (IB) region able to form a blocking junction with the substrate and of the appearance of an IB conduction. Explanations based on ordinary device physics fail to justify all the unconventional behavior of the characteristics observed.
ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2009.05.014