Low-temperature/high-temperature AlN superlattice buffer layers for high-quality Al(x))Ga(1- )(x))N on Si (1 1 1

We present MOVPE-grown, high-quality Al(x))Ga(1-)(x)) N layers with Al content up to x=0.65 on Si (1 1 1) substrates. Crack-free layers with smooth surface and low defect density are obtained with optimized AlN-based seeding and buffer layers. High-temperature AlN seeding layers and (low temperature (LT)/high temperature (HT)) AlN-based superlattices (SLs) as buffer layers are efficient in reducing the dislocation density and in-plane residual strain. The crystalline quality of Al(x))Ga(1- )(x))N was characterized by high-resolution X-ray diffraction (XRD). With optimized AlN-based seeding and SL buffer layers, best [Omega]-FWHMs of the (0 0 0 2) reflection of 540 and 1400 arcsec for the (1 0 1- 0) reflection were achieved for a [not, vert, similar]1-km-thick Al(0.1)Ga(0.9)N layer and 1010 and 1560 arcsec for the (0 0 0 2) and (1 0 1- 0) reflection of a [not, vert, similar]500-nm-thick Al(0.65)Ga(0.35)N layer. AFM and FE-SEM measurements were used to study the surface morphology and TEM cross-section measurements to determine the dislocation behaviour. With a high crystalline quality and good optical properties, Al(x))Ga(1-)(x)) N layers can be applied to grow electronic and optoelectronic device structures on silicon substrates in further investigations.